1/8 february 2003 this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. STGW20NB60K n-channel 20a - 600v -to-247 short circuit proof powermesh? igbt n high input impedance (voltage driven) n low on-voltage drop (v cesat ) n low on-losses n low gate charge n high current capability n off losses include tail current n very high frequency operation n short circuit rated n latch current free operation description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding performances. the suffix k identifies a family optimized for high frequency motor control applications with short circuit withstand capability. applications n high frequency motor controls n u.p.s. n welding equipments absolute maximum ratings type v ces v ce(sat) i c STGW20NB60K 600 v < 2.8 v20a symbol parameter value unit v ces collector-emitter voltage (v gs =0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuos) at t c = 25c 40 a i c collector current (continuos) at t c = 100c 20 a i cm ( ) collector current (pulsed) 80 a tsc short circuit withstand 10 m s p tot total dissipation at t c = 25c 150 w derating factor 1 w/c t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c to-247 1 2 3 internal schematic diagram
STGW20NB60K 2/8 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic switching on rthj-case thermal resistance junction-case max 0.83 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-h thermal resistance case-heatsink typ 0.5 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collectro-emitter breakdown voltage i c = 250 a, v ge =0 600 v i ces collector cut-off (v ge =0) v ce = max rating, t c =25c 10 a v ce = max rating, t c = 125 c 100 a i ges gate-emitter leakage current (v ce =0) v ge =20v,v ce =0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250a 57v v ce(sat) collector-emitter saturation voltage v ge =15v,i c =20a 2.3 2.8 v v ge = 15v, i c = 20 a, tj =125c 1.9 v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25v , i c =20 a 8s c ies input capacitance v ce =25v,f=1mhz,v ge =0 1300 pf c oes output capacitance 200 pf c res reverse transfer capacitance 30 pf q g total gate charge v ce = 480v, i c =20a, v ge =15v 90 nc q ge gate-emitter charge t.b.d. nc q gc gate-collector charge t.b.d. nc tscw short circuit withstand time v ce = 0.5 bvces , v ge =15v , tj = 125c , r g =10 w 10 s symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v cc =480v,i c =20a r g =10 w ,v ge =15v 20 ns t r rise time 70 ns (di/dt) on turn-on current slope v cc = 480 v, i c =20ar g =10 w v ge = 15 v,tj = 125c 350 a/s eon turn-on switching losses 300 j
3/8 STGW20NB60K electrical characteristics (continued) switching off note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) collector-emitter diode symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c =20a, r ge =10 w ,v ge =15v 120 ns t r (v off ) off voltage rise time 35 ns t d ( off ) delay time 130 ns t f fall time 80 ns e off (**) turn-off switching loss 0.45 mj e ts total switching loss 0.6 mj t c cross-over time v cc = 480 v, i c =20a, r ge =10 w ,v ge =15v tj = 125 c 190 ns t r (v off ) off voltage rise time 55 ns t d ( off ) delay time 160 ns t f fall time 150 ns e off (**) turn-off switching loss 0.75 mj e ts total switching loss 1.05 mj symbol parameter test conditions min. typ. max. unit i f i fm forward current forward current pulsed 10 80 a a v f forward on-voltage i f =10a i f = 10 a, tj = 125 c 1.27 1 2.0 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f =10a,v r =27v, tj =125c, di/dt = 100a/ m s 80.5 181 4.5 ns nc a
STGW20NB60K 4/8 transfer characteristics normalized gate threshold voltage vs temp. transconductance output characteristics switching off safe operating area thermal impedance
5/8 STGW20NB60K turn-off energy losses vs temperature collector-emitter on voltage vs temperature collector-emitter on voltage vs collector current capacitance variations normalized break-down voltage vs temp. gate-charge vs gate-emitter voltage
STGW20NB60K 6/8 fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
7/8 STGW20NB60K dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.14 0.17 l2 18.50 0.72 l3 14.20 14.80 0.56 0.58 l4 34.60 1.36 l5 5.50 0.21 m 2 3 0.07 0.11 v 5o 5o v2 60o 60o dia 3.55 3.65 0.14 0.143 to-247 mechanical data
STGW20NB60K 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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